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Title: Oxidation studies of CuInSe/sub 2/ and stability studies on CdS/CulnSe/sub 2/ solar cells

Thesis/Dissertation ·
OSTI ID:6882659

The aims of this study were: 1) To investigate the initial, thermal and anodic oxidation of p-type single-crystal CuInSe/sub 2/ using complementary Auger electron spectroscopy (AES), secondary ion mass spectroscopy (SIMS) X-ray photoelectron spectroscopy (XPS), low energy loss spectroscopy (LELS) and ellipsometry. The air-grown and Br-Methanol etched CuInSe/sub 2/ oxide is thin (20-40 A). Thermal oxides of CuInSe/sub 2/ grow rapidly above 180/sup 0/C. The oxides are predominately In/sub 2/O/sub 3/ with less than 10% SeO/sub 2/. No Cu or Cu-oxides were detected either by initial oxidation (LELS data) or thermal oxidation (XPS). The interface between the oxides was examined using AES depth-compositional profiling and XPS, and Cu/sub x/Se was found to form at the interface during the oxide growth. Oxide layer thicknesses and Se-3d electron escape depths were estimated from a consideration of XPS peak intensities. 2) To investigate and correlate the compositional and chemical properties of the CdS/CuInSe/sub 2/ solar cells with photovoltaic performance under various heat-treatments and prolonged illumination. These investigations show that: 1) The initial growth of CdS/CuInSe/sub 2/ produces a mixed Cu/sub 2/S/Cu/sub 2/Se transition layer at the CdS/CuInSe/sub 2/ interface. 2) The CdS/CuInSe/sub 2/ is electrically and compositionally stable up to 170/sup 0/C. However, at temperatures greater or equal to 240/sup 0/C, diffusion of Cd into the Cu-ternary interface takes place. Such diffusion might be one of the reasons for cell degradation. 3) Cell performance was improved as a result of oxygen anneal.

OSTI ID:
6882659
Resource Relation:
Other Information: Thesis (Ph. D.)
Country of Publication:
United States
Language:
English