Epitaxial regrowth of ruby on sapphire for an integrated thin film stress sensor

Journal Article · Mon Jan 16 04:00:00 EST 1995 · Applied Physics Letters; (United States)

DOI:https://doi.org/10.1063/1.113522· OSTI ID:6881788

Wen, Q; Clarke, D R ^[1]; Yu, N; Nastasi, M ^[2]

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1. Materials Department, College of Engineering, University of California, Santa Barbara, California 93106-5050 (United States)
2. Materials Science and Technology Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States)

The formation of thin film ruby by the epitaxial growth of Cr-doped amorphous alumina on sapphire is described. The incorporation of Cr onto the Al cation sites has been found by ion channeling measurements. It is also confirmed by the observation of the R1 and R2 luminescence lines characteristic of ruby. The frequency of the R lines shift linearly with applied stress and the piezo-spectroscopic coefficient is the same as for bulk ruby.

• OSTI ID: 6881788
• Journal Information: Applied Physics Letters; (United States), Journal Name: Applied Physics Letters; (United States) Vol. 66:3; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360201 -- Ceramics
Cermets
& Refractories-- Preparation & Fabrication
360203 -- Ceramics
Cermets
& Refractories-- Mechanical Properties
360204* -- Ceramics
Cermets
& Refractories-- Physical Properties
ALLOYS
ALUMINIUM COMPOUNDS
ALUMINIUM OXIDES
CHALCOGENIDES
CHROMIUM ADDITIONS
CHROMIUM ALLOYS
CORUNDUM
ELECTRICITY
EPITAXY
FILMS
LUMINESCENCE
MEASURING METHODS
MINERALS
OXIDE MINERALS
OXIDES
OXYGEN COMPOUNDS
PHOTOLUMINESCENCE
PIEZOELECTRICITY
RUBY
SPECTRAL SHIFT
STRESS ANALYSIS
THIN FILMS