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Laser gain and threshold properties in compressive-strained and lattice-matched GaInNAs/GaAs quantum wells

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.125181· OSTI ID:687980
; ; ; ;  [1]
  1. Sandia National Laboratories, Albuquerque, New Mexico 87185-0601 (United States)

The optical gain spectra for compressive-strained and lattice-matched GaInNAs/GaAs quantum wells are computed using a microscopic laser theory. From these spectra, the peak gain and carrier radiative decay rate as functions of carrier density are determined. These dependences allow the study of lasing threshold current density for different GaInNAs/GaAs laser structures. {copyright} {ital 1999 American Institute of Physics.}

OSTI ID:
687980
Journal Information:
Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 19 Vol. 75; ISSN APPLAB; ISSN 0003-6951
Country of Publication:
United States
Language:
English

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