Front tracking simulations of ion deposition and resputtering
- Univ. of Stony Brook, NY (United States). Dept. of Applied Mathematics and Statistics
This paper describes surface evolution formulated in terms of a Hamilton-Jacobi equation and a solution algorithm based on a three-dimensional front tracking algorithm. The method achieves sharp resolution in the evolution of surface edges and corners. This study is motivated by semiconductor chip evolution during deposition and resputtering processes. For this reason, they discuss here the effects of diffuse prescattering on surface features. They illustrate some of the three-dimensional capabilities of the front tracking algorithm. They also present a validation study by display of two-dimensonal cross sections of three-dimensional simulations of a finite-length trench. The cross sections correspond to two-dimensional simulations of S. Hamaguchi and S.M. Rossnagel.
- Sponsoring Organization:
- USDOE, Washington, DC (United States); National Science Foundation, Washington, DC (United States); Department of the Army, Washington, DC (United States)
- DOE Contract Number:
- FG02-90ER25084
- OSTI ID:
- 687494
- Journal Information:
- SIAM Journal on Scientific Computing, Journal Name: SIAM Journal on Scientific Computing Journal Issue: 5 Vol. 20; ISSN 1064-8275; ISSN SJOCE3
- Country of Publication:
- United States
- Language:
- English
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