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Angle-resolved photoemission studies of Ge(111)-c(2 x 8), Ge(111)-(1 x 1)H, Si(111)-(7 x 7), and Si(100)-(2 x 1)

Journal Article · · Phys. Rev. B: Condens. Matter; (United States)
Angle resolved photoemission measurements have been carried out for Ge(111)-c(2 x 8), Ge(111)-(1 x 1)H, Si(111)-(7 x 7), and Si(100)-(2 x 1) in a normal emission geometry over a wide photon energy range. For Ge(111) and Si(100), dispersive bulk-derived transitions were observed, from which the authors have determined the bulk valence-band dispersion relations for Ge along the (111) direction and for Si along the (100) direction in the Brillouin zone. The results are compared with the theoretical band dispersions of Chelikowsky and Cohen. For Si(111)-(7 x 7), the spectra are dominated by nondispersive features which cannot be used for band mapping. The lack of dispersive bulk-transition features for Si(111)-(7 x 7) is explained in terms of a relatively extended near-surface strain field which renders the electron crystal momentum highly mixed. Several surface-state features on these surfaces were also observed; most of them are visible over a very wide photon energy range and are indeed dispersionless, confirming the previous surface-state assignments. 31 references, 6 figures.
Research Organization:
Univ. of Illinois, Urbana
DOE Contract Number:
AC02-76ER01198
OSTI ID:
6871180
Journal Information:
Phys. Rev. B: Condens. Matter; (United States), Journal Name: Phys. Rev. B: Condens. Matter; (United States) Vol. 32:4; ISSN PRBMD
Country of Publication:
United States
Language:
English