Hydrogen-induced breakdown of low-temperature molecular-beam epitaxy of Si

Journal Article · Wed Feb 15 04:00:00 EST 1995 · Physical Review, B: Condensed Matter; (United States)

DOI:https://doi.org/10.1103/PhysRevB.51.4630· OSTI ID:6869845

Asoka-Kumar, P; Szpala, S; Nielsen, B; Szeles, C; Lynn, K G ^[1]; Lanford, W A; Shepard, C A ^[2]; Gossmann, H ^[3]

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1. Department of Physics, Brookhaven National Laboratory, Upton, New York 11973 (United States)
2. Department of Physics, State University of New York at Albany, Albany, New York 12222 (United States)
3. AT T Bell Laboratories, 600 Mountain Avenue, Murray Hill, New Jersey 07974 (United States)

Low-temperature molecular-beam epitaxy of Si is characterized by the existence of an epitaxial thickness [ital h][sub epi], below which the film is epitaxial and above which the film turns amorphous. Epitaxial films with a thickness beyond [ital h][sub epi] can be grown, provided a rapid-thermal-anneal (RTA) step to a sufficient temperature, [ital T][sub RTA], is executed before reaching [ital h][sub epi]. Positron-annihilation spectroscopy shows that [ital T][sub RTA]=450 [degree]C is not sufficient but 500 [degree]C is. We explain this cutoff in RTA temperature using a model based on Si-H bond breaking. Nuclear reactions analysis support this model and show a high concentration of hydrogen in films grown with RTA below 450 [degree]C. According to the proposed model, a reduction of the hydrogen content in the growth ambient should lead to larger [ital h][sub epi].

• DOE Contract Number: AC02-76CH00016
• OSTI ID: 6869845
• Journal Information: Physical Review, B: Condensed Matter; (United States), Journal Name: Physical Review, B: Condensed Matter; (United States) Vol. 51:7; ISSN PRBMDO; ISSN 0163-1829
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360606* -- Other Materials-- Physical Properties-- (1992-)
CHARGED PARTICLE DETECTION
CHEMICAL REACTIONS
CHEMISORPTION
CRYSTAL DEFECTS
CRYSTAL GROWTH
CRYSTAL STRUCTURE
DESORPTION
DETECTION
ELEMENTS
EPITAXY
HYDROGEN
NONMETALS
POSITRON DETECTION
RADIATION DETECTION
SEMIMETALS
SEPARATION PROCESSES
SILICON
SORPTION
SORPTIVE PROPERTIES
SURFACE PROPERTIES