Geometric Frustration of 2D Dopants in Silicon: Surpassing Electrical Saturation
- Bell Laboratories, Lucent Technologies, Murray Hill, New Jersey 07974 (United States)
- Applied Engineering Physics, Cornell University, Ithaca, New York 14850 (United States)
A novel application of scanning transmission electron microscopy, combined with data from x-ray absorption spectroscopy, establishes that high concentrations of n -type Sb dopants distributed within a two-dimensional (2D) layer in Si can contribute up to an order of magnitude higher free-carrier density than similar dopant concentrations distributed over a three-dimensional region. This difference is explained using a simple model in which formation of electrically deactivating centers is inhibited by solely geometric constraints. It should be possible to extend these ideas for obtaining even higher free-carrier densities in Si from 2D layers of Sb and other group V donors. {copyright} {ital 1999} {ital The American Physical Society }
- OSTI ID:
- 686911
- Journal Information:
- Physical Review Letters, Vol. 83, Issue 16; Other Information: PBD: Oct 1999
- Country of Publication:
- United States
- Language:
- English
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