Localization in carbon nanotubes within a tight-binding model

Journal Article · Fri Oct 01 04:00:00 UTC 1999 · Physical Review, B: Condensed Matter

DOI:https://doi.org/10.1103/PhysRevB.60.10735· OSTI ID:686891

Kostyrko, T; Bartkowiak, M ^[1]; Mahan, G D ^[1]

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1. Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831-6030 (United States)

We analyze the influence of defects on conductance, density of states, and localization in (N{sub a},N{sub a}) armchair carbon nanotubes within a tight-binding model. Using the transfer-matrix method, we calculate the reflection (related to the conductance) from a sequence of defects and relate its energy dependence near the Fermi level to the appearance of a quasibound state. This state is also seen in the density of states and in the energy dependence of the quasiparticle lifetime. We compute the localization length {xi}({omega}) as a function of energy {omega}. Comparison of {xi}(0) with the mean free path l{sub mfp} in the limit of small defect concentration c and small defect strength E leads to a simple approximate relation {xi}(0){approx}3l{sub mfp}=3{times}3aN{sub a}t{sup 2}/2cE{sup 2} (t{emdash} hopping integral, a{emdash} lattice constant). {copyright} {ital 1999} {ital The American Physical Society}

• OSTI ID: 686891
• Journal Information: Physical Review, B: Condensed Matter, Journal Name: Physical Review, B: Condensed Matter Journal Issue: 15 Vol. 60; ISSN 0163-1829; ISSN PRBMDO
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CARBON
CRYSTAL DEFECTS
ELECTRIC CONDUCTIVITY
ELECTRONIC STRUCTURE
ENERGY-LEVEL DENSITY
FERMI LEVEL
TRANSFER MATRIX METHOD
TUBES
WAVE FUNCTIONS