Effects of irradiation temperature and dose on exfoliation of H{sup +}-implanted silicon carbide
- Motorola Inc., Tempe, Arizona 85284 (United States)
- Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831 (United States)
H{sup +} implantation of SiC is the basis for a thin-film transfer process, which when combined with oxidation and hydrophilic wafer bonding, can be exploited to produce silicon carbide-on-insulator material useful as a wide-band-gap semiconductor. This thin-film transfer process has been successfully applied to Si to produce a commercial silicon-on-insulator material. The efficacy of hydrogen to produce thin-film separation was studied by investigation of H{sup +}-induced exfoliation in implanted SiC. Results showed that the onset and degree of exfoliation of SiC depends initially upon the concentration of implanted H{sup +}. However, the dose dependence of exfoliation exhibits a rather marked retrograde behavior. The degree of exfoliation eventually starts to decrease with increasing ion dose until exfoliation is completely suppressed. This behavior is attributed to a competition between the positive effects of hydrogen on exfoliation and the negative effects of ion-induced damage. Experiments were done to isolate the effects of the hydrogen{endash}silicon chemistry from that of implant damage. Damage is reduced independently of H{sup +} dosage by elevating the temperature of the SiC during implant in order to promote dynamic annealing. This will be shown to have a dramatic effect upon exfoliation. The {open_quotes}hot{close_quotes} implant lowers the H{sup +} fluence required to affect thin-film separation, making the process more efficient, and producing SiC material with fewer defects. {copyright} {ital 1999 American Institute of Physics.}
- OSTI ID:
- 686845
- Journal Information:
- Applied Physics Letters, Vol. 75, Issue 17; Other Information: PBD: Oct 1999
- Country of Publication:
- United States
- Language:
- English
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