Observation of metal{endash}oxide{endash}semiconductor transistor operation using scanning capacitance microscopy
- Microelectronics Development Laboratory, Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States)
- Digital Instruments, Santa Barbara, California 93117 (United States)
We report scanning capacitance microscopy (SCM) images of a working {ital p}-channel metal{endash}oxide{endash}semiconductor field-effect transistor ({ital P}-MOSFET) during device operation. Independent bias voltages were applied to the source/gate/drain/well regions of the MOSFET during SCM imaging, and the effect of these voltages on the SCM images is discussed. {copyright} {ital 1999 American Institute of Physics.}
- OSTI ID:
- 686511
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 15 Vol. 75; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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