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Comment on {open_quotes}Theory of Metal-Insulator Transitions in Gated Semiconductors{close_quotes}

Journal Article · · Physical Review Letters
 [1];  [2];  [3]
  1. Physics Department, Northeastern University Boston, Massachusetts 02115 (United States)
  2. Physics Department City College of the City University of New York New York, New York 10031 (United States)
  3. Department of Physics, Columbia University New York, New York 10027 (United States)

A Comment on the Letter by Boris L. Altshuler and Dmitrii L. Maslov, Phys.thinspthinspRev.thinspthinspLett.thinspthinsp{bold 82}, 145 (1999). The authors of the Letter offer a Reply. {copyright} {ital 1999} {ital The American Physical Society}

OSTI ID:
686478
Journal Information:
Physical Review Letters, Journal Name: Physical Review Letters Journal Issue: 10 Vol. 83; ISSN 0031-9007; ISSN PRLTAO
Country of Publication:
United States
Language:
English

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