Magnetic-field-induced V-shaped quantized conductance staircase in a double-layer quantum point contact

Journal Article · Wed Sep 01 00:00:00 EDT 1999 · Physical Review, B: Condensed Matter

DOI:https://doi.org/10.1103/PhysRevB.60.7732· OSTI ID:686458

Lyo, S K ^[1]

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1. Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States)

We show that the low-temperature conductance ({ital G}) of a quantum point contact consisting of ballistic tunnel-coupled double-layer quantum-well wires is modulated by an in-layer magnetic field {ital B} due to the anticrossing. {ital B} creates a V-shaped quantum staircase for {ital G}, causing it to decrease in steps of 2e{sup 2}/h to a minimum and then increase to a maximum, where {ital G} may saturate or decrease again at higher {ital B}`s. Relevance of the result to recent data is discussed. {copyright} {ital 1999} {ital The American Physical Society}

• OSTI ID: 686458
• Journal Information: Physical Review, B: Condensed Matter, Journal Name: Physical Review, B: Condensed Matter Journal Issue: 11 Vol. 60; ISSN 0163-1829; ISSN PRBMDO
• Country of Publication: United States
• Language: English

Related Subjects

66 PHYSICS
ALUMINIUM ARSENIDES
ELECTRIC CONDUCTIVITY
GALLIUM ARSENIDES
MAGNETIC FIELDS
MODULATION
QUANTIZATION
SEMICONDUCTOR JUNCTIONS
TUNNEL EFFECT