Large refractive index changes in tunable-electron-density InGaAs/InAlAs quantum wells

Journal Article · Mon Jan 01 00:00:00 EST 1990 · IEEE Photonics Technology Letters (Institute of Electrical and Electronics Engineers); (USA)

DOI:https://doi.org/10.1109/68.47032· OSTI ID:6857710

Zucker, J E; Chang, T Y; Wegener, M; Sauer, N J; Jones, K L; Chemla, D S ^[1]

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1. AT and T Bell Laboratories, Holmdel, NJ (US)

The authors present measurements of electrorefraction and electroabsorption in a novel multiple quantum well waveguide structure in which each InGaAs quantum well is provided with an individual electron reservoir. External bias transfers electrons into the wells, thus quenching the absorption and producing a refractive index change at wavelengths below the bandedge which is linear in the applied voltage. The authors demonstrate that in this type of structure both the change in refractive index per applied field and the ratio of optical phase to intensity modulation can be significantly enhanced over those found in the quantum confined Stark effect.

• OSTI ID: 6857710
• Journal Information: IEEE Photonics Technology Letters (Institute of Electrical and Electronics Engineers); (USA), Vol. 2:1; ISSN 1041-1135
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
47 OTHER INSTRUMENTATION
ALUMINIUM ARSENIDES
ELECTRO-OPTICAL EFFECTS
GALLIUM ARSENIDES
INDIUM ARSENIDES
SEMICONDUCTOR LASERS
QUANTUM EFFICIENCY
ELECTRON DENSITY
FREQUENCY MODULATION
STARK EFFECT
TUNING
WAVEGUIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
EFFICIENCY
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
LASERS
MODULATION
PNICTIDES
SEMICONDUCTOR DEVICES
SOLID STATE LASERS
426002* - Engineering- Lasers & Masers- (1990-)
657002 - Theoretical & Mathematical Physics- Classical & Quantum Mechanics
440600 - Optical Instrumentation- (1990-)