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Defects in synthetic quartz crystals

Journal Article · · Inorg. Mater. (Engl. Transl.); (United States)
OSTI ID:6856560
This paper presents an experimental study of the most characteristic defects in synthetic alpha-quartz by using thermoluminescence (TL) and EPR techniques. The light sum corresponding to any given TL peak is proportional to the trap concentration. The dependences of the light sum on the total gamma dose is presented in a log-log plot. The defects of the first type produce electron traps after gamma irradiation of alpha-quartz at a depth of (0.9 +/- 0.1) eV. Upon a single heat treatment of alpha-quartz followed by gamma-irradiation the vacancy-type defects become dominant, formed by the transformation of structural defects containing silanol groups.
Research Organization:
M.V. Lomonosov State Univ
OSTI ID:
6856560
Journal Information:
Inorg. Mater. (Engl. Transl.); (United States), Journal Name: Inorg. Mater. (Engl. Transl.); (United States) Vol. 22:2; ISSN INOMA
Country of Publication:
United States
Language:
English