Direct-current-magnetron deposition of molybdenum and tungsten with rf-substrate bias

Journal Article · Sun Apr 01 04:00:00 EST 1984 · J. Vac. Sci. Technol., A; (United States)

DOI:https://doi.org/10.1116/1.572749· OSTI ID:6849749

Bensaoula, A; Wolfe, J C; Ignatiev, A; Fong, F; Leung, T

It has recently been shown that the stress of many refractory thin films deposited by dc-magnetron sputtering can be influenced by the sputtering pressure. Usually the transition from compressive to tensile stress is too sharp for pressure to be a reliable variable for stress control. This is particularly true in applications such as x-ray optics and lithography where extremely low stress is required owing to minimal substrate rigidity. In this paper, we show that there exists a broad region of the parameter space of current, pressure, and rf-substrate bias where tungsten and molybdenum may be deposited with low stress. A detailed study of the effects of these parameters upon stress, plasma etch rate, and resistivity is reported.

• Research Organization: Departments of Physics and Electrical Engineering, University of Houston, Houston, Texas 77004
• OSTI ID: 6849749
• Journal Information: J. Vac. Sci. Technol., A; (United States), Journal Name: J. Vac. Sci. Technol., A; (United States) Vol. 2:2; ISSN JVTAD
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360101* -- Metals & Alloys-- Preparation & Fabrication
360104 -- Metals & Alloys-- Physical Properties
COATINGS
DEPOSITION
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELECTRON TUBES
ELECTRONIC EQUIPMENT
ELEMENTS
EQUIPMENT
ETCHING
FILMS
MAGNETRONS
MECHANICAL PROPERTIES
METALS
MICROWAVE EQUIPMENT
MICROWAVE TUBES
MOLYBDENUM
PHYSICAL PROPERTIES
PRESSURE DEPENDENCE
SEMIMETALS
SILICON
SPUTTERING
STRESSES
SURFACE COATING
SURFACE FINISHING
TENSILE PROPERTIES
THIN FILMS
TRANSITION ELEMENTS
TUNGSTEN
VACUUM COATING
VAPOR DEPOSITED COATINGS