Proton-enhanced diffusion and vacancy migration in silicon

Journal Article · Mon May 01 04:00:00 EDT 1978 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.325193· OSTI ID:6848088

Masters, B J; Gorey, E F

Single crystals of silicon containing prediffused arsenic, boron, and phosphorus profiles are bombarded at 600--900 /sup 0/C with 250--360-keV protons. Under conditions approaching ideality (low impurity concentration and less than 10/sup 1/3 protons/cm/sup 2/ sec) enhanced impurity diffusion appears to proceed in an uncomplicated manner which is well described by steady-state kinetic treatment. At high temperatures and very low bombardment fluxes the enhanced-diffusion coefficients are observed to be temperature independent and first-order dependent upon flux. At moderately increased damage rates, particularly at lower temperatures, the diffusivities become temperature dependent and a half-order flux dependence is observed. The results are explained by assuming proton-enhanced diffusion to be controlled by the migration of split monovacancies (semivacancy pairs). Consistency with annealing studies of radiation-induced defects at much lower temperatures and with thermally activated diffusion studies at higher temperatures is attained by assuming a 1.47-eV migrational enthalpy and a 3.66-eV enthalpy of formation for the uncharged defect.

• Research Organization: IBM System Products Division, East Fishkill, Hopewell Junction, New York 12533
• OSTI ID: 6848088
• Journal Information: J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 49:5; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
BEAMS
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DIFFUSION
DOPED MATERIALS
DOSE-RESPONSE RELATIONSHIPS
ELEMENTS
ENERGY RANGE
HIGH TEMPERATURE
KEV RANGE
KEV RANGE 100-1000
NUCLEON BEAMS
PARTICLE BEAMS
PHYSICAL RADIATION EFFECTS
POINT DEFECTS
PROTON BEAMS
RADIATION EFFECTS
SEMIMETALS
SILICON
TEMPERATURE DEPENDENCE
VACANCIES