Pressure effects on the electronic structure of 4f and 5f materials
Conference
·
OSTI ID:6843595
The ..gamma..-..cap alpha.. transition in Ce has been the focus of considerable theoretical effort. It has been attributed to a Mott- like transition of the 4f electrons from localized to itinerant character, as well as to volume sensitivity of the Kondo binding energy, to mention two of the competing explanations. Less attention has been directed towards analogous transitions observed at higher pressures in Pr, Nd, and Sm among the elemental 4f metals; and in Am, Cm, Bk, and Cf among the 5f metals. This paper reviews our current theoretical understanding of the evolution in electronic structure which underlies these dramatic transitions in compressed 4f and 5f materials. 42 refs., 3 figs.
- Research Organization:
- Lawrence Livermore National Lab., CA (USA)
- DOE Contract Number:
- W-7405-ENG-48
- OSTI ID:
- 6843595
- Report Number(s):
- UCRL-98881; CONF-880914-1; ON: DE88014149
- Country of Publication:
- United States
- Language:
- English
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