Skip to main content
U.S. Department of Energy
Office of Scientific and Technical Information

Interference-filter-tuned, alignment-stabilized, semiconductor external-cavity laser

Journal Article · · Opt. Lett.; (United States)
DOI:https://doi.org/10.1364/OL.13.000826· OSTI ID:6841924
We compared the angular alignment tolerance and the tuning range of a novel interference-filter-tuned semiconductor external-cavity laser based on a degenerate resonator with characteristics similar to those of a conventional grating-tuned external-cavity laser using a 1300-nm InGaAsP Fabry--Perot laser with an antireflection-coated facet as the gain medium. The interference-filter cavity had a 260-fold greater alignment tolerance ( +- A26 versus +- A0.1 mrad) and nearly the same tuning range (90 versus 110 nm) as the grating-tuned cavity.
Research Organization:
Hewlett-Packard Laboratories, Palo Alto, California 94304
OSTI ID:
6841924
Journal Information:
Opt. Lett.; (United States), Journal Name: Opt. Lett.; (United States) Vol. 13:10; ISSN OPLED
Country of Publication:
United States
Language:
English

Similar Records

Bistability in grating-tuned external-cavity semiconductor lasers
Journal Article · Sat Oct 31 23:00:00 EST 1987 · IEEE J. Quant. Electron.; (United States) · OSTI ID:5612578

Alignment-stabilized grating-tuned external-cavity semiconductor laser
Journal Article · Tue May 01 00:00:00 EDT 1990 · Optics Letters; (USA) · OSTI ID:7149862

Communications: fiber-coupled external cavity semiconductor laser. Annual summary report 1 Jul 80-30 Jun 81
Technical Report · Wed Jul 01 00:00:00 EDT 1981 · OSTI ID:5396677