Structural and electrical properties of (Ti[sub 0. 9]Zr[sub 0. 1])Si[sub 2] thin films on Si(111)
- Department of Physics, North Carolina State University, Raleigh, North Carolina 27695-8202 (United States)
Alloy films of Ti and up to 20% Zr were prepared by codeposition onto Si(111) surfaces in ultrahigh vacuum. After [ital in] [ital situ] thermal annealing at temperatures of [similar to]600 [degree]C, the films form the C49 phase and are stable in this phase up to at least 910 [degree]C. In contrast, Ti films on Si(111) initially react to form the C49 phase and transform to the C54 phase at [similar to]700 [degree]C. The surfaces of the (Ti[sub 0.9]Zr[sub 0.1])Si[sub 2] alloy films are studied by atomic force microscopy and are shown to be smoother than the surfaces of TiSi[sub 2] films on Si substrates. In addition the tendency to island formation is also not observed for annealing temperatures less than 910 [degree]C. The sheet resistivity of the (Ti[sub 0.9]Zr[sub 0.1])Si[sub 2] alloy films is found to be [similar to]46 [mu][Omega] cm for annealing temperatures from 600 to 910 [degree]C.
- DOE Contract Number:
- FG05-89ER45384
- OSTI ID:
- 6841837
- Journal Information:
- Applied Physics Letters; (United States), Journal Name: Applied Physics Letters; (United States) Vol. 65:19; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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ANNEALING
DEPOSITION
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
FILMS
HEAT TREATMENTS
MORPHOLOGY
PHASE STABILITY
PHASE STUDIES
PHYSICAL PROPERTIES
SILICIDES
SILICON COMPOUNDS
STABILITY
STABILIZATION
THIN FILMS
TITANIUM COMPOUNDS
TITANIUM SILICIDES
TRANSITION ELEMENT COMPOUNDS
ZIRCONIUM COMPOUNDS
ZIRCONIUM SILICIDES