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Dynamically assisted interlayer hopping in YBa[sub 2]Cu[sub 3]O[sub 6+[ital x]]

Journal Article · · Physical Review, B: Condensed Matter; (United States)
; ;  [1]; ;  [2]
  1. Department of Physics and Frederick Seitz Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801 (United States)
  2. Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439 (United States)
We report evidence from [ital c]-axis-polarized Raman scattering and optical-reflectivity measurements that doping-induced and phonon-mediated changes in the O(4)-Cu(1)-O(4) structure influence [ital c]-axis charge dynamics in YBa[sub 2]Cu[sub 3]O[sub 6+[ital x]]. With increased doping, we observe a rapid increase in the interbilayer hopping rate which we suggest may be caused by the systematic decrease in the Cu(2)-O(4) bond length. Also, [ital c]-axis-polarized Raman scattering measurements provide evidence that dynamical modulation of the O(4)-Cu(2) bond length by [ital c]-axis phonons contributes to assisted'' interbilayer hopping.
Research Organization:
Argonne National Laboratory (ANL), Argonne, IL
DOE Contract Number:
W-31109-ENG-38
OSTI ID:
6841775
Journal Information:
Physical Review, B: Condensed Matter; (United States), Journal Name: Physical Review, B: Condensed Matter; (United States) Vol. 50:18; ISSN PRBMDO; ISSN 0163-1829
Country of Publication:
United States
Language:
English