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Title: Modeling of current and thermal mode second breakdown phenomena

Conference ·
OSTI ID:6839240

We have used a computer code which solves the transport equations for electrons and holes in conjunction with the heat transfer equation, to investigate current mode and thermal second breakdown (CSB and TSB). For an epitaxial transistor, we have calculated the average failure threshold power and the average failure threshold energy, as a function of the delay time to failure for different external resistances. We show that, because of the existence of two types of breakdown phenomena, the threshold power and threshold energy curves are not a continuous function of the delay times. We have calculated the evolution of the electric fields and the densities of holes and electrons as a function of space and time during current mode second breakdown. And, we have investigated the temporal behavior of the temperature during second breakdown. Finally, we present some preliminary experimental results concerning the threshold power for breakdown.

Research Organization:
Lawrence Livermore National Lab., CA (USA)
DOE Contract Number:
W-7405-ENG-48
OSTI ID:
6839240
Report Number(s):
UCRL-87400; CONF-820946-1; ON: DE82020965
Resource Relation:
Conference: 4. annual electrical overstress/electrostatic discharge symposium, Orlando, FL, USA, 21 Sep 1982; Other Information: Portions of document are illegible
Country of Publication:
United States
Language:
English