Modeling of current and thermal mode second breakdown phenomena
We have used a computer code which solves the transport equations for electrons and holes in conjunction with the heat transfer equation, to investigate current mode and thermal second breakdown (CSB and TSB). For an epitaxial transistor, we have calculated the average failure threshold power and the average failure threshold energy, as a function of the delay time to failure for different external resistances. We show that, because of the existence of two types of breakdown phenomena, the threshold power and threshold energy curves are not a continuous function of the delay times. We have calculated the evolution of the electric fields and the densities of holes and electrons as a function of space and time during current mode second breakdown. And, we have investigated the temporal behavior of the temperature during second breakdown. Finally, we present some preliminary experimental results concerning the threshold power for breakdown.
- Research Organization:
- Lawrence Livermore National Lab., CA (USA)
- DOE Contract Number:
- W-7405-ENG-48
- OSTI ID:
- 6839240
- Report Number(s):
- UCRL-87400; CONF-820946-1; ON: DE82020965
- Resource Relation:
- Conference: 4. annual electrical overstress/electrostatic discharge symposium, Orlando, FL, USA, 21 Sep 1982; Other Information: Portions of document are illegible
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
SUPERCONDUCTIVITY AND SUPERFLUIDITY
42 ENGINEERING
SEMICONDUCTOR DEVICES
BREAKDOWN
TRANSISTORS
CARRIER DENSITY
CHARGE CARRIERS
CHARGE TRANSPORT
COMPUTER CALCULATIONS
ELECTRIC FIELDS
ELECTRONS
FAILURES
HOLES
MATHEMATICAL MODELS
THERMAL CONDUCTIVITY
THRESHOLD ENERGY
ELEMENTARY PARTICLES
ENERGY
FERMIONS
LEPTONS
PHYSICAL PROPERTIES
THERMODYNAMIC PROPERTIES
656000* - Condensed Matter Physics
420800 - Engineering- Electronic Circuits & Devices- (-1989)