The evolution of silicon wafer cleaning technology

Journal Article · Fri Jun 01 04:00:00 EDT 1990 · Journal of the Electrochemical Society; (USA)

DOI:https://doi.org/10.1149/1.2086825· OSTI ID:6825422

Kern, W ^[1]

---

1. Lam Research Corp., Advanced Research Center, San Diego, CA (US)

The purity of wafer surfaces is an essential requisite for the successful fabrication of VLSI and ULSI silicon circuits. Wafer cleaning chemistry has remained essentially unchanged in the past 25 years and is based on hot alkaline and acidic hydrogen peroxide solutions, a process known as RCA Standard Clean. This is still the primary method used in the industry. What has changed is its implementation with optimized equipment:from simple immersion to centrifugal spraying, megasonic techniques, and enclosed system processing that allow simultaneous removal of both contaminant films and particles. Improvements in wafer drying by use of isopropanol vapor or by slow-pull out of hot deionized water are being investigated. Several alternative cleaning methods are also being tested, including choline solutions, chemical vapor etching, and UV/ozone treatments. The evolution of silicon wafer cleaning processes and technology is traced and reviewed.

• OSTI ID: 6825422
• Journal Information: Journal of the Electrochemical Society; (USA), Journal Name: Journal of the Electrochemical Society; (USA) Vol. 137:6; ISSN 0013-4651; ISSN JESOA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360601* -- Other Materials-- Preparation & Manufacture
42 ENGINEERING
426000 -- Engineering-- Components
Electron Devices & Circuits-- (1990-)
656003 -- Condensed Matter Physics-- Interactions between Beams & Condensed Matter-- (1987-)
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CENTRIFUGAL PUMPS
CHEMICAL COATING
CHEMICAL REACTION KINETICS
CHEMICAL VAPOR DEPOSITION
CLEANING
DEPOSITION
DRYING
ELECTROMAGNETIC RADIATION
ELECTRONIC CIRCUITS
ELEMENTS
ETCHING
FABRICATION
FILMS
HYDROGEN COMPOUNDS
HYDROGEN PEROXIDE
IMPURITIES
INTEGRATED CIRCUITS
KINETICS
MICROELECTRONIC CIRCUITS
OXYGEN COMPOUNDS
OZONE
PEROXIDES
PUMPS
RADIATIONS
REACTION KINETICS
SEMIMETALS
SILICON
SPRAY DRYING
SURFACE COATING
SURFACE FINISHING
THIN FILMS
ULTRAVIOLET RADIATION