Role of hydrogen in the formation of metastable defects in hydrogenated amorphous silicon

Journal Article · Sat Jan 14 23:00:00 EST 1989 · Phys. Rev. B: Condens. Matter; (United States)

DOI:https://doi.org/10.1103/PhysRevB.39.1164· OSTI ID:6822252

Jackson, W B; Marshall, J M; Moyer, M D

This paper presents results of studies on carrier-induced metastable defect creation in hydrogenated amorphous silicon. The metastable defects were studied by measuring the threshold voltage shifts on thin-film amorphous silicon transistors and capacitors as a function of time, temperature, and bias. The kinetics (time, temperature, bias, and doping dependence) of these defects as well as most other metastable-defect processes are quantitatively explained by hydrogen diffusion and the creation of defects due to the presence of excess band-tail carriers.

• Research Organization: Xerox Corporation, Palo Alto Research Center, Palo Alto, California 94304
• OSTI ID: 6822252
• Journal Information: Phys. Rev. B: Condens. Matter; (United States), Journal Name: Phys. Rev. B: Condens. Matter; (United States) Vol. 39:2; ISSN PRBMD
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360603* -- Materials-- Properties
AMORPHOUS STATE
CAPACITORS
CHARGE CARRIERS
DIFFUSION
ELECTRIC POTENTIAL
ELECTRICAL EQUIPMENT
ELEMENTS
ENERGY LEVELS
EQUIPMENT
EXCITED STATES
FILMS
HYDRIDES
HYDROGEN
HYDROGEN COMPOUNDS
METASTABLE STATES
NONMETALS
ORGANIC COMPOUNDS
ORGANIC SILICON COMPOUNDS
SEMICONDUCTOR DEVICES
SILANES
SILICON COMPOUNDS
TEMPERATURE DEPENDENCE
THIN FILMS
TIME DEPENDENCE
TRANSISTORS