Theory of strained-layer epitaxial growth near step flow
- School of Physics, Georgia Institute of Technology, Atlanta, Georgia 30332 (United States)
A reaction-diffusion theory of homoepitaxial growth on a stepped surface introduced by Myers-Beaghton and Vvedensky [Phys. Rev. A 44, 2457 (1991)] and Fuenzalida [Phys. Rev. B 44, 10 835 (1991)] is generalized to the case of heteroepitaxy by taking account of misfit strain relief in the growing epilayer. For deposition conditions where two-dimensional (2D) islands nucleate on the terraces before individual adatoms can migrate to vicinal step edges, analysis of the distribution of island sizes resolved in both space and time reveals a strain-driven transition from the familiar layer growth mode dominated by 2D island coalescence to a form of step flow where moving steps engulf very many very small 2D islands. The latter mode of growth is predicted to persist until three-dimensional island formation disrupts layer growth altogether. Both with and without strain, it is found that the island size distribution averaged over a terrace very rapidly approaches a steady-state form, even when kinematic theory predicts oscillations in the signal from diffraction measurements.
- DOE Contract Number:
- FG05-88ER45369
- OSTI ID:
- 6820173
- Journal Information:
- Physical Review, B: Condensed Matter; (United States), Journal Name: Physical Review, B: Condensed Matter; (United States) Vol. 50:19; ISSN PRBMDO; ISSN 0163-1829
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
360606* -- Other Materials-- Physical Properties-- (1992-)
ACTIVATION ENERGY
ADSORBENTS
ARSENIC COMPOUNDS
ARSENIDES
CHEMICAL REACTIONS
CHEMISORPTION
CRYSTAL GROWTH
DESORPTION
DIFFUSION
ENERGY
EPITAXY
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INDIUM ARSENIDES
INDIUM COMPOUNDS
MOLECULES
NUCLEATION
PNICTIDES
SEPARATION PROCESSES
SORPTION
SORPTIVE PROPERTIES
STRAINS
SURFACE PROPERTIES