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Theory of strained-layer epitaxial growth near step flow

Journal Article · · Physical Review, B: Condensed Matter; (United States)
; ;  [1]
  1. School of Physics, Georgia Institute of Technology, Atlanta, Georgia 30332 (United States)

A reaction-diffusion theory of homoepitaxial growth on a stepped surface introduced by Myers-Beaghton and Vvedensky [Phys. Rev. A 44, 2457 (1991)] and Fuenzalida [Phys. Rev. B 44, 10 835 (1991)] is generalized to the case of heteroepitaxy by taking account of misfit strain relief in the growing epilayer. For deposition conditions where two-dimensional (2D) islands nucleate on the terraces before individual adatoms can migrate to vicinal step edges, analysis of the distribution of island sizes resolved in both space and time reveals a strain-driven transition from the familiar layer growth mode dominated by 2D island coalescence to a form of step flow where moving steps engulf very many very small 2D islands. The latter mode of growth is predicted to persist until three-dimensional island formation disrupts layer growth altogether. Both with and without strain, it is found that the island size distribution averaged over a terrace very rapidly approaches a steady-state form, even when kinematic theory predicts oscillations in the signal from diffraction measurements.

DOE Contract Number:
FG05-88ER45369
OSTI ID:
6820173
Journal Information:
Physical Review, B: Condensed Matter; (United States), Journal Name: Physical Review, B: Condensed Matter; (United States) Vol. 50:19; ISSN PRBMDO; ISSN 0163-1829
Country of Publication:
United States
Language:
English