Monolithic high voltage nonlinear transmission line fabrication process

Patent · 04 October 1994

OSTI ID:6816921

Cooper, G A

A process for fabricating sequential inductors and varistor diodes of a monolithic, high voltage, nonlinear, transmission line in GaAs is disclosed. An epitaxially grown laminate is produced by applying a low doped active n-type GaAs layer to an n-plus type GaAs substrate. A heavily doped p-type GaAs layer is applied to the active n-type layer and a heavily doped n-type GaAs layer is applied to the p-type layer. Ohmic contacts are applied to the heavily doped n-type layer where diodes are desired. Multiple layers are then either etched away or Oxygen ion implanted to isolate individual varistor diodes. An insulator is applied between the diodes and a conductive/inductive layer is thereafter applied on top of the insulator layer to complete the process. 6 figs.

• DOE Contract Number: W-7405-ENG-48
• Assignee: PTO; EDB-94-168768
• Patent Number(s): A; US 5352627
• Application Number: PPN: US 8-058369
• OSTI ID: 6816921
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
426000* -- Engineering-- Components
Electron Devices & Circuits-- (1990-)
ARSENIC COMPOUNDS
ARSENIDES
ELECTRIC COILS
ELECTRICAL EQUIPMENT
ELECTRICAL INSULATION
EQUIPMENT
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
ION IMPLANTATION
LAYERS
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SOLENOIDS