Monolithic high voltage nonlinear transmission line fabrication process
A process for fabricating sequential inductors and varistor diodes of a monolithic, high voltage, nonlinear, transmission line in GaAs is disclosed. An epitaxially grown laminate is produced by applying a low doped active n-type GaAs layer to an n-plus type GaAs substrate. A heavily doped p-type GaAs layer is applied to the active n-type layer and a heavily doped n-type GaAs layer is applied to the p-type layer. Ohmic contacts are applied to the heavily doped n-type layer where diodes are desired. Multiple layers are then either etched away or Oxygen ion implanted to isolate individual varistor diodes. An insulator is applied between the diodes and a conductive/inductive layer is thereafter applied on top of the insulator layer to complete the process. 6 figs.
- DOE Contract Number:
- W-7405-ENG-48
- Assignee:
- PTO; EDB-94-168768
- Patent Number(s):
- US 5352627; A
- Application Number:
- PPN: US 8-058369
- OSTI ID:
- 6816921
- Resource Relation:
- Patent File Date: 10 May 1993
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
SEMICONDUCTOR DIODES
FABRICATION
ELECTRICAL INSULATION
GALLIUM ARSENIDES
ION IMPLANTATION
LAYERS
SOLENOIDS
ARSENIC COMPOUNDS
ARSENIDES
ELECTRIC COILS
ELECTRICAL EQUIPMENT
EQUIPMENT
GALLIUM COMPOUNDS
PNICTIDES
SEMICONDUCTOR DEVICES
426000* - Engineering- Components
Electron Devices & Circuits- (1990-)