Total dose radiation hardness of diamond-based silicon-on-insulator structures

Journal Article · Mon Jun 04 04:00:00 EDT 1990 · Applied Physics Letters; (USA)

DOI:https://doi.org/10.1063/1.102929· OSTI ID:6814516

Landstrass, M I ^[1]; Fleetwood, D M ^[2]

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1. Crystallume, 125 Constitution Drive, Menlo Park, California 94025 (US)
2. Sandia National Laboratories, Albuquerque, New Mexico 87185-5800 (USA)

Total dose radiation hardness measurements were performed on silicon-on-insulator (SOI) test structures where the insulator is chemical vapor deposited (CVD) diamond. These measurements represent a first look at the fundamental radiation response of low-pressure CVD synthetic diamond materials for SOI applications. Silicon/diamond metal-insulator-semiconductor (MIS) capacitors were subjected to both cobalt-60 and 10 keV x-ray irradiation up to doses of 1{times}10{sup 7} rad (SiO{sub 2}) while under positive, negative, and zero bias conditions. The diamond insulators used in these devices were found to be free from extensive hole or electron trapping. This behavior is consistent with the high electron and hole mobility of the polycrystalline diamond insulator.

• DOE Contract Number: AC04-76DP00789
• OSTI ID: 6814516
• Journal Information: Applied Physics Letters; (USA), Journal Name: Applied Physics Letters; (USA) Vol. 56:23; ISSN APPLA; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
CARBON
CARRIER MOBILITY
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
DEPOSITION
DIAMONDS
ELECTROMAGNETIC RADIATION
ELEMENTAL MINERALS
ELEMENTS
HARDNESS
IONIZING RADIATIONS
MECHANICAL PROPERTIES
MINERALS
MOBILITY
NONMETALS
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RADIATIONS
SEMIMETALS
SILICON
SURFACE COATING
X RADIATION