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U.S. Department of Energy
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Epitaxial silicon growth for solar cells. Quarterly report No. 1

Technical Report ·
DOI:https://doi.org/10.2172/6808726· OSTI ID:6808726
The work performed during the first quarter included the development of epitaxial baseline solar cell structures grown on conventional single crystal substrates and initial studies of epitaxial growth and the fabrication of solar cells on one type of polycrystalline substrate (Wacker SILSO). Details of the growth and fabrication procedures for the baseline solar cells are given along with measured cell parameters. The results show that solar cells fabricated on epitaxial layers of about one mil thickness can produce AM-1 efficiency of 12%. Reproducibility of these results was established and the direction to be taken for higher efficiency is identified. Growth studies on polycrystalline substrates were started and x-ray topographic studies of the epitaxial layers showed encouraging results in that a substantially lower defect density was noted in the grown layer. Initial results on epitaxial solar cells fabricated on polycrystalline substrates are discussed along with some limitations associated with the use of this material.
Research Organization:
RCA Labs., Princeton, N.J. (USA)
DOE Contract Number:
NAS-7-100-954817
OSTI ID:
6808726
Report Number(s):
DOE/JPL/954817-1
Country of Publication:
United States
Language:
English