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Title: Strip type radiation detector and method of making same

Patent ·
OSTI ID:6806135

An improved strip detector and a method for making such a detector are described. A high resistivity N conduction semiconductor body has electrode strips formed thereon by diffusion. The strips are formed so as to be covered by an oxide layer at the surface point of the PN junction and in which the opposite side of the semiconductor body then has a substantial amount of material etched away to form a thin semiconductor upon which strip electrodes which are perpendicular to the electrodes on the first side are then placed.

Assignee:
Siemens AG
Patent Number(s):
US 4060822
Application Number:
TRN: 79-002215
OSTI ID:
6806135
Resource Relation:
Patent File Date: Filed date 24 Feb 1976
Country of Publication:
United States
Language:
English