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Title: Advanced amorphous materials for photovoltaic conversion. Annual report for 1983

Technical Report ·
DOI:https://doi.org/10.2172/6804299· OSTI ID:6804299

The task of this program is to fabricate and characterize thin-film amorphous semiconductor photovoltaic devices, and to develop new materials with properties which help to improve the conversion efficiency and stability of the devices. An important goal of the program is to increase the rate of deposition of high-quality semiconducting material in order to make the technology more economical. The materials include intrinsic and doped hydrogenated amorphous silicon and related alloys deposited by rf capacitive glow discharge, and transparent conducting layers such as indium oxide and indium tin oxide. The improvement of deposition rate and the optimization of film properties for device applications require a fundamental understanding of the processes occurring in the glow-discharge plasma and at the surface of the growing film. Techniques such as optical emission spectroscopy and mass spectrometry are used to analyze these processes. The prepared films are studied using optical and infrared spectroscopy, electron microscopy, photoconductivity, and photoluminescence. The film properties are then correlated with plasma processing parameters. High-efficiency photovoltaic devices are fabricated in order to test the usefulness of the materials for the different layers of a solar cell, and to explore problems which may occur at the interfaces between these layers. Factors affecting the efficiency and stability of such cells are deduced from an analysis of their electrical characteristics and spectral response.

Research Organization:
Brookhaven National Lab. (BNL), Upton, NY (United States)
DOE Contract Number:
AC02-76CH00016
OSTI ID:
6804299
Report Number(s):
BNL-51772; ON: DE84017198
Country of Publication:
United States
Language:
English