Efficient visible photoluminescence in the binary a-Si:H/sub x/ alloy system

Journal Article · Tue Feb 15 00:00:00 EST 1983 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.93920· OSTI ID:6801679

Wolford, D J; Reimer, J A; Scott, B A

We report the photoluminescence (PL) and structural properties of a new class of efficient visible-light-emitting semiconductors: low defect density a-Si:H/sub x/ alloys. For films prepared by the (thermal) homogeneous chemical vapor deposition (HOMOCVD) method, new broadband PL develops for x>0.3, reaching a peak emission energy of 2.05 eV for a hydrogen content x = 0.66 (40 at. % H). We attribute the wide gaps to the influence of Si--H bonding on the density of states near the valence band edge. We ascribe the new PL process to band-to-band recombination from within the alloy band tails. This emission persists at room temperature with an integrated intensity comparable to conventional light-emitting diode (LED) materials. Qualitatively similar results are obtained for low-temperature-deposited rf plasma films prepared from Si/sub 2/H/sub 6/, but not from SiH/sub 4/. We show that a low Si dangling bond concentration is the key factor, for all the different film types, to achieving efficient luminescence.

• Research Organization: I.B.M. Thomas J. Watson Research Center, Yorktown Heights, New York 10598
• OSTI ID: 6801679
• Journal Information: Appl. Phys. Lett.; (United States), Vol. 42:4
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
SILANES
PHOTOLUMINESCENCE
CHEMICAL VAPOR DEPOSITION
CRYSTAL DEFECTS
ENERGY GAP
HYDROGEN
LIGHT EMITTING DIODES
MECHANICAL PROPERTIES
MEDIUM TEMPERATURE
QUANTITY RATIO
SILICON ALLOYS
VISIBLE RADIATION
ALLOYS
CHEMICAL COATING
CRYSTAL STRUCTURE
DEPOSITION
ELECTROMAGNETIC RADIATION
ELEMENTS
HYDRIDES
HYDROGEN COMPOUNDS
LUMINESCENCE
NONMETALS
RADIATIONS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SILICON COMPOUNDS
SURFACE COATING
360603* - Materials- Properties