1. 3-. mu. m integrated external cavity distributed Bragg reflector laser

Journal Article · Wed Jul 01 00:00:00 EDT 1987 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.339838· OSTI ID:6799012

Piccirilli, A B; Dutta, N K; Napholtz, S G; Cella, T; Brown, R L

The fabrication and performance characteristics of single-wavelength integrated external cavity distributed Bragg reflector lasers are described. The active cavity section of these devices utilize the double-channel planar-buried heterostructure scheme for current confinement. The 4-mm-long lasers have threshold current --70 mA and emit near 1.3 ..mu..m. The lasers exhibit lower dc chirp than distributed feedback lasers.

• Research Organization: ATandT Bell Laboratories, Murray Hill, New Jersey 07974
• OSTI ID: 6799012
• Journal Information: J. Appl. Phys.; (United States), Vol. 62:1
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
SEMICONDUCTOR LASERS
BRAGG REFLECTION
FABRICATION
LASER CAVITIES
PERFORMANCE
EXPERIMENTAL DATA
FREQUENCY MODULATION
GALLIUM ARSENIDES
GALLIUM PHOSPHIDES
HETEROJUNCTIONS
INDIUM ARSENIDES
INDIUM PHOSPHIDES
INFRARED RADIATION
THRESHOLD CURRENT
ARSENIC COMPOUNDS
ARSENIDES
CURRENTS
DATA
ELECTRIC CURRENTS
ELECTROMAGNETIC RADIATION
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
INFORMATION
JUNCTIONS
LASERS
MODULATION
NUMERICAL DATA
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
RADIATIONS
REFLECTION
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
420300* - Engineering- Lasers- (-1989)