1. 3-. mu. m integrated external cavity distributed Bragg reflector laser

Journal Article · Wed Jul 01 04:00:00 EDT 1987 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.339838· OSTI ID:6799012

Piccirilli, A B; Dutta, N K; Napholtz, S G; Cella, T; Brown, R L

The fabrication and performance characteristics of single-wavelength integrated external cavity distributed Bragg reflector lasers are described. The active cavity section of these devices utilize the double-channel planar-buried heterostructure scheme for current confinement. The 4-mm-long lasers have threshold current --70 mA and emit near 1.3 ..mu..m. The lasers exhibit lower dc chirp than distributed feedback lasers.

• Research Organization: ATandT Bell Laboratories, Murray Hill, New Jersey 07974
• OSTI ID: 6799012
• Journal Information: J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 62:1; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ARSENIC COMPOUNDS
ARSENIDES
BRAGG REFLECTION
CURRENTS
DATA
ELECTRIC CURRENTS
ELECTROMAGNETIC RADIATION
EXPERIMENTAL DATA
FABRICATION
FREQUENCY MODULATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
HETEROJUNCTIONS
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
INFORMATION
INFRARED RADIATION
JUNCTIONS
LASER CAVITIES
LASERS
MODULATION
NUMERICAL DATA
PERFORMANCE
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
RADIATIONS
REFLECTION
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
THRESHOLD CURRENT