Large area silicon drift detectors for x-rays -- New results

Journal Article · Tue Jun 01 00:00:00 EDT 1999 · IEEE Transactions on Nuclear Science

DOI:https://doi.org/10.1109/23.775529· OSTI ID:679570

Iwanczyk, J S; Patt, B E; Tull, C R; Segal, J D ^[1]; Kenney, C J ^[2]; Bradley, J ^[3]; Hedman, B; Hodgson, K O ^[4]

---

1. Photon Imaging, Inc., Northridge, CA (United States)
2. Univ. of Hawaii, Honolulu, HI (United States). Dept. of Physics
3. Jet Propulsion Lab., Pasadena, CA (United States)
4. Stanford Univ., CA (United States)

Large area silicon drift detectors, consisting of 8 mm and 12 mm diameter hexagons, were fabricated on 0.35 mm thick high resistivity n-type silicon. An external FET and a low-noise charge sensitive preamplifier were used for testing the prototype detectors. The detector performance was measured in the range {minus}75 to 25 C using Peltier cooling, and from 0.125 to 6 {micro}s amplifier shaping time. Measured energy resolutions were 159 eV FWHM and 263 eV FWHM for the 0.5 cm{sup 2} and 1 cm{sup 2} detectors, respectively (at 5.9 keV, {minus}75 C, 6 {micro}s shaping time). The uniformity of the detector response over the entire active area (measured using 560 nm light) was <0.5%.

• Sponsoring Organization: National Insts. of Health, Bethesda, MD (United States); USDOE, Washington, DC (United States); National Aeronautics and Space Administration, Washington, DC (United States)
• DOE Contract Number: FG03-97ER82450
• OSTI ID: 679570
• Report Number(s): CONF-981110-; ISSN 0018-9499; TRN: 99:009502
• Journal Information: IEEE Transactions on Nuclear Science, Vol. 46, Issue 3Pt1; Conference: 1998 IEEE nuclear science symposium and medical imaging conference, Toronto (Canada), 10-12 Nov 1998; Other Information: PBD: Jun 1999
• Country of Publication: United States
• Language: English

Related Subjects

44 INSTRUMENTATION
INCLUDING NUCLEAR AND PARTICLE DETECTORS
X-RAY DETECTION
SI SEMICONDUCTOR DETECTORS
DRIFT CHAMBERS
PERFORMANCE
ENERGY RESOLUTION
RESPONSE FUNCTIONS
DESIGN