skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Performance of CdZnTe geometrically weighted semiconductor Frisch grid radiation detectors

Journal Article · · IEEE Transactions on Nuclear Science
DOI:https://doi.org/10.1109/23.775523· OSTI ID:679564
 [1];  [2]
  1. Univ. of Michigan, Ann Arbor, MI (United States). Dept. of Nuclear Engineering and Radiological Sciences
  2. Etec Systems, Inc., Hayward, CA (United States)

Semiconductor Frisch grid radiation detectors have been manufactured and tested with encouraging results. Resolution enhancement occurs as a result of combining the geometric weighting effect, the small pixel effect and the Frisch grid effect. The devices are operated at ambient temperature without any pulse shape correction, rejection and compensation techniques. The new devices are manufactured from CdZnTe and do not require any cooling for operation. The geometrically weighted detectors have only one signal output to a standard commercially available Ortec 142A preamplifier. The detectors operate with simple commercially available NIM electronics, hence the device design can be coupled to any typical NIM system without the need for special electronic instruments or circuits. Geometrically weighted detectors that are 1 cubic centimeter in volume were fabricated from counter grade material, yet have shown room temperature energy resolution of 7.5% FWHM (at 29 C) for {sup 57}Co 122 keV gamma rays and 2.68% FWHM (at 23 C) for {sup 137}Cs 662 keV gamma rays.

OSTI ID:
679564
Report Number(s):
CONF-981110-; ISSN 0018-9499; TRN: 99:009496
Journal Information:
IEEE Transactions on Nuclear Science, Vol. 46, Issue 3Pt1; Conference: 1998 IEEE nuclear science symposium and medical imaging conference, Toronto (Canada), 10-12 Nov 1998; Other Information: PBD: Jun 1999
Country of Publication:
United States
Language:
English