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Title: High temperature superconducting thin film structure and method of making

Patent ·
OSTI ID:6793598

This patent describes a high temperature superconducting thin film structure. It comprises: a substrate and a high {Tc} superconducting thin film spaced from the substrate, a diffusion barrier layer in the space between the substrate and the high {Tc} superconducting thin film wherein the diffusion barrier layer is lattice matched both to the substrate and to the superconducting film and wherein the diffusion barrier layer has a high chemical stability, a high melting point, and a high electrical conductivity, and wherein the diffusion barrier layer is a compound selected from the group consisting of YB{sub 2}, TbB{sub 2}, VN, VC, V{sub 2}C{sub 3}, CrN, W{sub 2}N, GdB, DyB, HoB, the tetragonal tetraborides of Y, Pu, Ce, Sm, and Er, the hexaborides of Ca, Sr, Y, Th, Pu, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Yo, Er, Tm, Yb, and Lu, and the tetrafluoride of Zr, ZrF{sub 4}, and wherein the substrate is a single crystal selected from the group consisting of strontium titanate, SrTiO{sub 3}, yttri-stabilized zirconia, ZrO{sub 2}{bond}(Y), alumina, Al{sub 2}O{sub 3}, and magnesium oxide, MgO, and wherein the superconducting thin film material is selected from the group consisting of YBa{sub 2}Cu{sub 3}O{sub 7}, Tl{sub 2}Ba{sub 2}CaCu{sub 2}O{sub 8}, Bi{sub 2}CaSr{sub 3}Cu{sub 2}O{sub 7{minus}{ital x}}, BiCaSrCu{sub 2}O{sub 7{minus}{ital x}}, Bi{sub 2}Ca{sub 2}SrCu{sub 3}O{sub 7{minus} {ital x}}, and BiCa{sub 2}Sr{sub 3}Cu{sub 4}O{sub 7{minus}{ital x}} where x can range from zero to 1.

Assignee:
Secretary of the Army, Washington, DC (USA)
Patent Number(s):
US 4940693; A
Application Number:
PPN: US s 7-225439; TRN: 90-030904
OSTI ID:
6793598
Resource Relation:
Patent File Date: 28 Jul 1988
Country of Publication:
United States
Language:
English