Charge imbalance induced by a temperature gradient in superconducting aluminum

Journal Article · Sun Apr 01 04:00:00 EST 1984 · Phys. Rev. B: Condens. Matter; (United States)

DOI:https://doi.org/10.1103/PhysRevB.29.3881· OSTI ID:6792719

Mamin, H J; Clarke, J; Van Harlingen, D J

The quasiparticle transport current induced in a superconducting aluminum film by a temperature gradient has been measured by means of the spatially decaying charge imbalance generated near the end of the sample where the current is divergent. The magnitude and decay length of the charge imbalance are in good agreement with the predictions of a simple model that takes into account the nonuniformity of the temperature gradient. The inferred value of the thermopower in the superconducting state agrees reasonably well with the value measured in the normal state. Measurements of the decay length of charge imbalance induced by current injection yield a value of the inelastic relaxation time tau/sub E/ of about 2 ns. This value is substantially smaller than that obtained from other measurements for reasons that are not known.

• Research Organization: Department of Physics, University of California, Berkeley, California 94720 and Materials and Molecular Research Division, Lawrence Berkeley Laboratory, Berkeley, California 94720
• OSTI ID: 6792719
• Journal Information: Phys. Rev. B: Condens. Matter; (United States), Journal Name: Phys. Rev. B: Condens. Matter; (United States) Vol. 29:7; ISSN PRBMD
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360104* -- Metals & Alloys-- Physical Properties
656102 -- Solid State Physics-- Superconductivity-- Acoustic
Electronic
Magnetic
Optical
& Thermal Phenomena-- (-1987)
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINIUM
CHARGE CARRIERS
CHARGE DISTRIBUTION
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELEMENTS
FILMS
METALS
PHYSICAL PROPERTIES
QUASI PARTICLES
SUPERCONDUCTING FILMS
SUPERCONDUCTIVITY
TEMPERATURE GRADIENTS
THERMOELECTRIC PROPERTIES