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Title: Grain orientation mapping of passivated aluminum interconnect lines by x-ray micro-diffraction

Journal Article · · AIP Conference Proceedings
DOI:https://doi.org/10.1063/1.56826· OSTI ID:678846
; ; ;  [1]
  1. Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States)

A micro x-ray diffraction facility is under development at the Advanced Light Source. Spot sizes are typically about 1-{mu}m size generated by means of grazing incidence Kirkpatrick-Baez focusing mirrors. Photon energy is either white of energy range 6{endash}14 keV or monochromatic generated from a pair of channel cut crystals. Laue diffraction pattern from a single grain in a passivated 2-{mu}m wide bamboo structured Aluminum interconnect line has been recorded. Acquisition times are of the order of seconds. The Laue pattern has allowed the determination of the crystallographic orientation of individual grains along the line length. The experimental and analysis procedure used is described, as is the latest grain orientation result. The impact of x-ray micro-diffraction and its possible future direction are discussed in the context of other developments in the area of electromigration, and other technological problems. {copyright} {ital 1998 American Institute of Physics.}

Research Organization:
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
AC03-76SF00098
OSTI ID:
678846
Report Number(s):
CONF-980364-; ISSN 0094-243X; TRN: 9904M0006
Journal Information:
AIP Conference Proceedings, Vol. 449, Issue 1; Conference: 1998 international conference on characterization and metrology for ULSI technology, Gaithersburg, MD (United States), 23-27 Mar 1998; Other Information: PBD: Nov 1998
Country of Publication:
United States
Language:
English