Temperature dependent gain of the atomic xenon laser

Journal Article · Wed Dec 01 04:00:00 EST 1993 · Bulletin of the American Physical Society

DOI:https://doi.org/10.1063/1.110310· OSTI ID:67875

Hebner, G A ^[1]; Shon, J W; Kushner, M J ^[2]

---

1. Sandia National Labs., Albuquerque, NM (United States)
2. Univ. of Illinois, Urbana, IL (United States)

Measured and calculated gain of the 1.73 {mu}m (5d(3/2){sub 1} - 6p(5/2){sub 2}) and 2.03 {mu}m (5d(3/2){sub 1} - 6p(3/2){sub 1}) atomic xenon transitions for gas temperatures between 290 K and 590 K are presented. Fission-fragment excitations was used to characterize the gain in several Ar/Xe, He/Ar/Xe and Ne/Ar/Xe gas mixtures at a pump power of 8 W/cm{sup 3}. For a constant gas density, the gain exhibits an approximately T{sub gas}{sup {minus}n} dependence with n between 2 and 3. The dominatant reactions for controlling gas temperature dependencies have been identified as dimer formation, dissociative recombination and their effects on electron density. The implications of these measurements and calculations on scaling and high temperature operation will be discussed.

• Research Organization: Sandia National Laboratory
• Sponsoring Organization: USDOE
• DOE Contract Number: AC04-76DP00789
• OSTI ID: 67875
• Report Number(s): CONF-9310400--
• Journal Information: Bulletin of the American Physical Society, Journal Name: Bulletin of the American Physical Society Journal Issue: 13 Vol. 38; ISSN BAPSA6; ISSN 0003-0503
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
FISSION FRAGMENTS
GAIN
GAS LASERS
PUMPING
TEMPERATURE DEPENDENCE
XENON