Correlation of stimulated H/sup +/-desorption threshold with localized state observed in Auger line shape: Si(100):H

Journal Article · Thu Jul 15 00:00:00 EDT 1982 · Phys. Rev. B: Condens. Matter; (United States)

DOI:https://doi.org/10.1103/PhysRevB.26.896· OSTI ID:6774007

Madden, H H; Jennison, D R; Traum, M M; Margaritondo, G; Stoffel, N G

We report the first observation of a localized two-hole electronic excitation on a covalently bonded surface. We find that the electron-stimulated desorption threshold for this system corresponds to the localized state energy. This suggests that localized multihole excitations are important dissociation channels in extended covalent systems.

• Research Organization: Sandia National Laboratories, Albuquerque, New Mexico 87185
• OSTI ID: 6774007
• Journal Information: Phys. Rev. B: Condens. Matter; (United States), Vol. 26:2
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
HYDROGEN
ADSORPTION
AUGER ELECTRON SPECTROSCOPY
HYDROGEN IONS 1 PLUS
DESORPTION
SILICON
ELECTRON COLLISIONS
COVALENCE
EXCITATION
EXPERIMENTAL DATA
HOLES
CATIONS
CHARGED PARTICLES
COLLISIONS
DATA
ELECTRON SPECTROSCOPY
ELEMENTS
ENERGY-LEVEL TRANSITIONS
HYDROGEN IONS
INFORMATION
IONS
NONMETALS
NUMERICAL DATA
SEMIMETALS
SORPTION
SPECTROSCOPY
360603* - Materials- Properties