Effects of discharge parameters on deposition rate of hydrogenated amorphous silicon for solar cells from pure SiH/sub 4/ plasma
A systematic deposition of hydrogenated amorphous silicon films from pureSiH/sub 4/ plasma was made in a capacitively coupled RF glow-discharge system by changing anode--cathode spacing d and chamber pressure p simultaneously. The data of the deposition rate in the p-vs-d space had two boundaries. One was pd = const. The other seems to be pd/sup 2/ = const. The RF plasma can stably sustain between the boundaries. The boundaries are discussed with RF power per SiH/sub 4/ molecule and with overlapping Paschen's lines of various fragments, especially H/sub 2/ due to the SiH/sub 4/ dissociation. We found the optimum conditions in which the deposition rate was more than 10 A/s without large photo-induced degradation. 10% efficient p-i-n solar cells were achieved with the intrinsic layer deposition rate of 3.9 A/s and more than 6% efficiency with 10 A/s.
- Research Organization:
- Central Research Laboratories, Matsushita Electric Industrial Co., Ltd., Moriguchi, Osaka 570, Japan
- OSTI ID:
- 6773697
- Journal Information:
- J. Appl. Phys.; (United States), Vol. 62:2
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
SILICON
CHEMICAL VAPOR DEPOSITION
SILICON SOLAR CELLS
EFFICIENCY
FABRICATION
AMORPHOUS STATE
GROWTH
PLASMA
SILANES
CHEMICAL COATING
DEPOSITION
DIRECT ENERGY CONVERTERS
ELEMENTS
EQUIPMENT
HYDRIDES
HYDROGEN COMPOUNDS
ORGANIC COMPOUNDS
ORGANIC SILICON COMPOUNDS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
SEMIMETALS
SILICON COMPOUNDS
SOLAR CELLS
SOLAR EQUIPMENT
SURFACE COATING
140501* - Solar Energy Conversion- Photovoltaic Conversion