Fano resonances due to coupled magnetoexciton and continuum states in bulk semiconductors

Journal Article · Thu Dec 15 00:00:00 EST 1994 · Physical Review, B: Condensed Matter; (United States)

DOI:https://doi.org/10.1103/PhysRevB.50.17009· OSTI ID:6769150

Glutsch, S; Siegner, U; Mycek, M; Chemla, D S ^[1]

---

1. Department of Physics, University of California at Berkeley, Berkeley, California 94720 (United States) Materials Sciences Division, Lawrence Berkeley Laboratory, Berkeley, California 94720 (United States)

We have observed Fano resonances in linear absorption experiments on GaAs under a magnetic field. In a bulk semiconductor in a magnetic field, Fano interference is the result of the coupling of higher-order magnetoexcitons and energetically degenerate one-dimensional continuum states. We show that these experimental findings can be described by the model of a two-band semiconductor in the effective-mass approximation. Numerical calculations of the linear magnetoabsorption are presented that demonstrate that the coupling between magnetoexcitons and continuum states is due to Coulomb interaction.

• DOE Contract Number: AC03-76SF00098
• OSTI ID: 6769150
• Journal Information: Physical Review, B: Condensed Matter; (United States), Vol. 50:23; ISSN 0163-1829
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
GALLIUM ARSENIDES
FANO FACTOR
MAGNETO-OPTICAL EFFECTS
BAND THEORY
EFFECTIVE MASS
EXCITONS
MAGNETIC FIELDS
ARSENIC COMPOUNDS
ARSENIDES
GALLIUM COMPOUNDS
MASS
PNICTIDES
QUASI PARTICLES
360606* - Other Materials- Physical Properties- (1992-)