New deposition processes for the growth of oxide and nitride thin films
- Los Alamos National Lab., NM (US)
- Univ. of Houston, TX (US)
This is the final report of a three-year, Laboratory Directed Research and Development (LDRD) project at Los Alamos National Laboratory (LANL). The goal of this effort is to study the use of homoleptic metal amido compounds as precursors for chemical vapor deposition (CVD). The amides offer potential for the deposition of a variety of important materials at low temperatures. The establishment of these precursor compounds will enhance the ability to exploit the properties of advanced materials in numerous coatings applications. Experiments were performed to study the reactivity of Sn[NMe{sub 2}]{sub 4} with oxygen. The data demonstrated that gas-phase insertion of oxygen into the Sn-N bond, leading to a reactive intermediate, plays an important role in tin oxide deposition. Several CVD processes for technologically important materials were developed using the amido precursor complexes. These included the plasma enhanced CVD of TiN and Zr{sub 3}N{sub 4}, and the thermal CVD of GaN and Al N. Quality films were obtained in each case, demonstrating the potential of the amido compounds as CVD precursors.
- Research Organization:
- Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
- Sponsoring Organization:
- USDOE Assistant Secretary for Management and Administration, Washington, DC (US)
- DOE Contract Number:
- W-7405-ENG-36
- OSTI ID:
- 676883
- Report Number(s):
- LA-UR-98-1834; ON: DE99000838; TRN: US0301462
- Resource Relation:
- Other Information: Supercedes report DE99000838; PBD: [1998]; PBD: 1 Nov 1998
- Country of Publication:
- United States
- Language:
- English
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