Characterization of (Al,Ga,In)N grown using lateral epitaxial overgrowth. Annual report
Technical Report
·
OSTI ID:676094
The authors describe the effect of various growth parameters such as V/III ratio and temperature on the lateral epitaxial overgrowth of GaN by MOCVD. They also discuss the effect of the mask pattern geometry used as the `seed` template. Structural characterization (AFM, TEM) show that for suitable growth conditions the LEO GaN contains almost no threading dislocations (approximately 100,000/sq cm). Based on these results they developed a 40 micrometers period LEO GaN template (containing essentially dislocation-free regions approximately 15 micrometers wide) that is suitable for the subsequent growth of device layer structures and device fabrication. Preliminary results showing the improved properties of AlGaN/GaN and InGaN/GaN heterostructures grown on these templates are then discussed.
- Research Organization:
- California Univ., Santa Barbara, CA (United States)
- OSTI ID:
- 676094
- Report Number(s):
- AD-A--353538/XAB; CNN: Contract N00014-96-1-1024
- Country of Publication:
- United States
- Language:
- English
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