Single transverse mode operation in double heterostructure junction laser
Patent
·
OSTI ID:6758894
The invention discloses a semiconductor laser which comprises an optical confinement semiconductor layer having refractive index of n/sub 3/, an active layer of an optical waveguide having a refractive index of n/sub 1/ and formed on the semiconductor layer, a buffer layer having a refractive index of n/sub 2/ and formed on the active layer, a mode controlling striped semiconductor layer having a refractive index of n/sub 6/ and formed on the buffer layer and opposing contacts, and is controllable in the transverse mode in the relations of n/sub 6/ less than or equal to n/sub 2/ < n/sub 1/ and n/sub 3/ < n/sub 1/.
- Assignee:
- Nippon Telegraph and Telephone Public Corp.
- Patent Number(s):
- US 4128815
- OSTI ID:
- 6758894
- Country of Publication:
- United States
- Language:
- English
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