Electronic structure of HfN/sub 0. 93/(100) studied by angle-resolved photoemission

Journal Article · Wed Feb 15 04:00:00 EST 1989 · Phys. Rev. B: Condens. Matter; (United States)

DOI:https://doi.org/10.1103/PhysRevB.39.3599· OSTI ID:6757663

Lindstroem, J; Johansson, L I; Persson, P E.S.; Callena-circles, A; Law, D S.L.; Christensen, A N

An experimental and theoretical study of the electronic structure of HfN is reported. Results from angle-resolved photoemission experiments on HfN/sub 0.93/(100) are presented and interpreted with use of calculated results. The bulk-band structure of stoichiometric HfN was calculated relativistically and nonrelativistically using the linear augmented-plane-wave method. Predicted band locations and dispersions along the GAMMA--X direction are compared with experimental results. In general the experiment indicates smaller bandwidths and locates the bands deeper below the Fermi level than the calculated values. Calculations of photoemission spectra, made nonrelativistically, are also reported and these spectra are found to reflect the recorded spectra fairly well.

• Research Organization: Department of Physics and Measurement Technology, Linkoeping University, S-581chemically bond83 Linkoeping, Sweden
• OSTI ID: 6757663
• Journal Information: Phys. Rev. B: Condens. Matter; (United States), Journal Name: Phys. Rev. B: Condens. Matter; (United States) Vol. 39:6; ISSN PRBMD
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360204* -- Ceramics
Cermets
& Refractories-- Physical Properties
ELECTRONIC STRUCTURE
EMISSION
ENERGY LEVELS
FERMI LEVEL
HAFNIUM COMPOUNDS
HAFNIUM NITRIDES
NITRIDES
NITROGEN COMPOUNDS
PHOTOEMISSION
PNICTIDES
REFRACTORY METAL COMPOUNDS
SECONDARY EMISSION
STOICHIOMETRY
TRANSITION ELEMENT COMPOUNDS