Synthesis and atomic and electronic structure of new Si-Ge-C alloys and compounds
- Arizona State Univ., Tempe, AZ (United States)
The synthesis and characterization of completely novel binary and ternary alloy semiconductors and ordered phases based on C, Si, and Ge are discussed in this review. Metastable compound semiconductors with ordered structures, which include stoichiometric SiGe, Si{sub 4}C, Si{sub 3}GeC{sub 4} (sphalerite), Ge{sub 4}C, (Si{sub 2}Ge)C{sub x}, and (Ge{sub 2}Si)C{sub x} (x = 5%), are described. Materials systems include diamond-structured silicon-germanium solid solutions with dissolved carbon (Si{sub 1{minus}x{minus}y}Ge{sub x}C{sub y}), monocrystalline Ge{sub 1{minus}x}C{sub x} hybrids of Ge, and C-diamond and related Si-containing random alloy systems. The Si{sub 4}C and Ge{sub 4}C materials incorporate the corresponding tetrahedra that are linked together to form a diamond-cubic structure related to Si. The Si{sub 3}GeC{sub 4} phase is related to sphalerite and (Si{sub 2}Ge)C{sub x} had a new P{anti 3}m1 structure formed by Ge-Si-Si ordering along the diamond {l_angle}111{r_angle} direction. These compounds offer the prospect of band gaps wider than that of Si; in some cases, the band gaps are expected to become direct. This report emphasizes an approach that combines novel precursor chemistries and modern deposition techniques (ultrahigh-vacuum chemical-vapor deposition) to develop heteroepitaxial, device-quality inorganic materials. Important highlights of recent research based on conventional deposition methods are also summarized.
- OSTI ID:
- 675622
- Journal Information:
- Chemistry of Materials, Vol. 10, Issue 10; Other Information: PBD: Oct 1998
- Country of Publication:
- United States
- Language:
- English
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