Development of high-efficiency solar cells on silicon web: Final progress report for the period April 1, 1984 to September 30, 1986

Technical Report · Mon Oct 06 04:00:00 EDT 1986

DOI:https://doi.org/10.2172/6755907· OSTI ID:6755907

Meier, D L; Greggi, J; Hwang, J W; O'Keeffe, T W; Rohatgi, A; Schmidt, D N; Rai-Choudhury, P

The major objective of the work reported was to improve web base material with a goal of obtaining solar cell efficiencies in excess of 18% (AM1). Efforts were directed toward identifying carrier loss mechanisms in web silicon, eliminating or reducing these mechanisms, designing a high-efficiency cell structure with the aid of numerical models, and fabricating high-efficiency web solar cells. The defect which is primarily responsible for limiting the minority carrier diffusion length in dendritic web silicon solar cells was identified as a dislocation decorated with impurity precipitates. Low-energy hydrogen ion implantation was used to passivate the dislocation/precipitate defect in web silicon cells. Cells were fabricated from dendritic web silicon with oxide surface passivation, aluminum back reflector, and double-layer antireflective coating. The highest efficiency obtained was 16.6%. (LEW)

• Research Organization: Westinghouse Research and Development Center, Pittsburgh, PA (USA)
• DOE Contract Number: NAS-7-100-956786
• OSTI ID: 6755907
• Report Number(s): DOE/JPL-7005806; ON: DE87005806
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
CRYSTAL DEFECTS
CRYSTAL GROWTH METHODS
CRYSTAL STRUCTURE
DENDRITIC WEB GROWTH METHOD
DIRECT ENERGY CONVERTERS
EFFICIENCY
ELECTRON MICROSCOPY
ELEMENTS
EQUIPMENT
FABRICATION
HYDROGEN
ION IMPLANTATION
MICROSCOPY
NONMETALS
PASSIVATION
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
SILICON SOLAR CELLS
SOLAR CELLS
SOLAR EQUIPMENT
TRANSMISSION ELECTRON MICROSCOPY