Characteristics of the photelectromagnetic effect and properties of recombination centers in germanium single crystals irradiated with. cap alpha. particles

Journal Article · Sun Jan 01 00:00:00 EST 1984 · Sov. Phys. - Semicond. (Engl. Transl.); (United States)

OSTI ID:6754747

Babichenko, V S; Kikoin, L I; Lazarev, S D; Rzhanov, A E; Filippov, V I

The spatial distribution of defects created in Ge crystals by irradiation with 40-MeV ..cap alpha.. particles was investigated. The distribution of the defects acting as recombination centers had a decisive influence on the diffusion-recombination processes in this semiconductor. The carrier-capture cross section of the recombination centers (sigmaapprox.10/sup -15/ cm/sup 2/) was determined. A concept of a recombination wall, which appeared in the region of a maximum of the radiation defect concentration, was introduced. The experimental data were compared with theoretical representations. This comparison demonstrated that an investigation of the photoelectromagnetic effect could give information both on the nature of the spatial distribution of radiation defects and on the recombination parameters of an irradiated semiconductor.

• OSTI ID: 6754747
• Journal Information: Sov. Phys. - Semicond. (Engl. Transl.); (United States), Vol. 18:1
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
GERMANIUM
PHYSICAL RADIATION EFFECTS
ALPHA PARTICLES
CORRELATIONS
CRYSTAL DEFECTS
CYCLOTRONS
DIFFUSION
MEV RANGE 10-100
MONOCRYSTALS
OPTICAL PROPERTIES
RECOMBINATION
SPATIAL DISTRIBUTION
ACCELERATORS
CHARGED PARTICLES
CRYSTAL STRUCTURE
CRYSTALS
CYCLIC ACCELERATORS
DISTRIBUTION
ELEMENTS
ENERGY RANGE
METALS
MEV RANGE
PHYSICAL PROPERTIES
RADIATION EFFECTS
360605* - Materials- Radiation Effects