Structure defects in germanium irradiated by helium and hydrogen ions

Journal Article · Sat Oct 01 04:00:00 EDT 1983 · Sov. Phys. - Solid State (Engl. Transl.); (United States)

OSTI ID:6754652

Aseev, A L; Ivakhnishin, V M; Stas', V F; Smirnov, L S

Electron microscopy is used to study the structure of germanium layers irradiated by helium and hydrogen ions in a wide range of ion energies and subsequent annealing temperatures. It is shown that the main type of defect in germanium layers irradiated by helium ions is a cluster of interstitial atoms in the form of rod-shaped defects and )113) defects. Annealing these layers leads to a contraction of the dimensions of these defects and to their transformation into dislocation loops. The results of a study of the structural changes and of the electrophysical properties of the irradiated layers leads to the conclusion that the contraction of the dimensions of the rod-shaped defects and )113) defects takes place as a result of generation of interstitial atoms in the bulk of the crystal. The differences in the structure of layers irradiated by helium and hydrogen ions are due to different interaction mechanisms of the atoms of the implanted impurity with the radiation point defects.

• Research Organization: Institute of Semiconductor Physics, Siberian Branch, Academy of Sciences of the USSR
• OSTI ID: 6754652
• Journal Information: Sov. Phys. - Solid State (Engl. Transl.); (United States), Journal Name: Sov. Phys. - Solid State (Engl. Transl.); (United States) Vol. 25:10; ISSN SPSSA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
ANNEALING
CHARGED PARTICLES
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DISLOCATIONS
ELECTRICAL PROPERTIES
ELECTRON MICROSCOPY
ELEMENTS
GERMANIUM
HEAT TREATMENTS
HELIUM IONS
HYDROGEN IONS
INTERSTITIALS
IONS
LAYERS
LINE DEFECTS
METALS
MICROSCOPY
PHYSICAL PROPERTIES
PHYSICAL RADIATION EFFECTS
POINT DEFECTS
RADIATION EFFECTS