Effects of mechanical stress on electromigration-driven transgranular void dynamics in passivated metallic thin films

Journal Article · Tue Dec 01 00:00:00 EST 1998 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.122913· OSTI ID:675106

Gungor, M R; Maroudas, D ^[1]; Gray, L J ^[2]

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1. Department of Chemical Engineering, University of California, Santa Barbara, California 93106-5080 (United States)
2. Computer Sciences and Mathematics Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831 (United States)

The combined effects of mechanical stress and surface electromigration on the dynamics of transgranular voids in passivated metallic thin films are analyzed based on self-consistent dynamical simulations. Depending on the strength of the electric and stress fields, void morphological instabilities can lead to film failure by propagation from the void surface of either faceted slits or finer-scale crack-like features. Most importantly, there exists a narrow range of applied stress for given strength of electric field over which slit formation can be inhibited completely. {copyright} {ital 1998 American Institute of Physics.}

• OSTI ID: 675106
• Journal Information: Applied Physics Letters, Vol. 73, Issue 26; Other Information: PBD: Dec 1998
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ELECTROPHORESIS
CRACKS
STRESSES
MIGRATION
SURFACES
THIN FILMS
MASS TRANSFER
ELECTRIC FIELDS
VOIDS
METALS
SIMULATION
INTEGRATED CIRCUITS
PASSIVATION