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Title: Photovoltaic properties of reactively sputtered Cu/sub x/S--CdS heterojunctions

Conference ·
OSTI ID:6748500

The use of sputtering techniques as an attractive means of fabricating low-cost thin film solar cells has been studied for the Cu/sub x/S-CdS heterojunction system. Control of the Cu/sub x/S stoichiometry is done using variable partial pressures of H/sub 2/S in a reactive sputtering mode with excellent results. Measured optical absorption spectra, film resistivity, and x-ray diffraction analysis verify the consistent formation of chalcocite. TEM electron diffraction studies indicate epitaxial formation of the reactively sputtered Cu/sub x/S on CdS consistent with a measured interface recombination velocity, S/sub I/, of 2 x 10/sup 5/ cm/sec. Cell forward and reverse I-V characteristics are also dominated by tunneling processes, as has been observed for wet-dip Cu/sub x/S-CdS heterojunctions. Measured minority carrier diffusion lengths, L/sub e/, of equal to or greater than 1000 A in the Cu/sub x/S, coupled with significant red response of heterojunction cells, verify the suitability of reactively sputtered Cu/sub x/S for efficient cell fabrication. Cell efficiencies of 4% have been obtained and are limited at present by technological factors including cell shorting and surface roughness problems.

Research Organization:
California Univ., Livermore (USA). Lawrence Livermore Lab.
DOE Contract Number:
W-7405-ENG-48
OSTI ID:
6748500
Report Number(s):
UCRL-81199; CONF-780619-11
Resource Relation:
Conference: IEEE photovoltaic specialists conference, Washington, DC, USA, 5 Jun 1978
Country of Publication:
United States
Language:
English